Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative difference...

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Bibliographic Details
Published in:Applied physics letters 2014-09, Vol.105 (13)
Main Authors: Auf der Maur, M., Galler, B., Pietzonka, I., Strassburg, M., Lugauer, H., Di Carlo, A.
Format: Article
Language:English
Subjects:
Applied physics
Computer simulation
COMPUTERIZED SIMULATION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
ELECTRIC CONDUCTIVITY
EMISSION
GALLIUM NITRIDES
INDIUM COMPOUNDS
Indium gallium nitrides
LIGHT EMITTING DIODES
Mathematical models
Organic light emitting diodes
QUANTUM WELLS
TRAPS
TUNNEL EFFECT
WAVELENGTHS
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Summary:Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4896970