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Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative difference...

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Published in:	Applied physics letters 2014-09, Vol.105 (13)
Main Authors:	Auf der Maur, M., Galler, B., Pietzonka, I., Strassburg, M., Lugauer, H., Di Carlo, A.
Format:	Article
Language:	English
Subjects:	Applied physics Computer simulation COMPUTERIZED SIMULATION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURRENTS ELECTRIC CONDUCTIVITY EMISSION GALLIUM NITRIDES INDIUM COMPOUNDS Indium gallium nitrides LIGHT EMITTING DIODES Mathematical models Organic light emitting diodes QUANTUM WELLS TRAPS TUNNEL EFFECT WAVELENGTHS
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cited_by	cdi_FETCH-LOGICAL-c351t-218a90ae7772aa8bcf9e3a43b9fb5182ea094bb7516f31220dbda63a2e5da5243
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container_issue	13
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container_title	Applied physics letters
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creator	Auf der Maur, M. Galler, B. Pietzonka, I. Strassburg, M. Lugauer, H. Di Carlo, A.
description	Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.
doi_str_mv	10.1063/1.4896970
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source	American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects	Applied physics Computer simulation COMPUTERIZED SIMULATION CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY CURRENTS ELECTRIC CONDUCTIVITY EMISSION GALLIUM NITRIDES INDIUM COMPOUNDS Indium gallium nitrides LIGHT EMITTING DIODES Mathematical models Organic light emitting diodes QUANTUM WELLS TRAPS TUNNEL EFFECT WAVELENGTHS
title	Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes
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