Ambipolar quantum dots in intrinsic silicon

We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the...

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Bibliographic Details
Published in:Applied physics letters 2014-10, Vol.105 (15)
Main Authors: Betz, A. C., Gonzalez-Zalba, M. F., Podd, G., Ferguson, A. J.
Format: Article
Language:English
Subjects:
Applied physics
Barriers
CHARGE STATES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Contact resistance
ELECTRIC CONTACTS
ELECTRONS
NOISE
QUANTUM DOTS
SILICON
TUNNEL EFFECT
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Summary:We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4898704