Ambipolar quantum dots in intrinsic silicon

We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the...

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Published in:Applied physics letters 2014-10, Vol.105 (15)
Main Authors: Betz, A. C., Gonzalez-Zalba, M. F., Podd, G., Ferguson, A. J.
Format: Article
Language:English
Subjects:
Applied physics
Barriers
CHARGE STATES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Contact resistance
ELECTRIC CONTACTS
ELECTRONS
NOISE
QUANTUM DOTS
SILICON
TUNNEL EFFECT
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cited_by cdi_FETCH-LOGICAL-c285t-acc54e3e9bcc316a1de67039f39eb3b02273f413fd05dc1bd137b3cbada831953
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container_title Applied physics letters
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creator Betz, A. C.
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description We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p- and n-type ohmic contacts enables the accumulation of either electrons or holes. Thus, we are able to study both transport regimes within the same device. We investigate the effect of the tunnel barriers and the electrostatically defined quantum dots. There is greater localisation of charge states under the tunnel barriers in the case of hole conduction, leading to higher charge noise in the p-type regime.
doi_str_mv 10.1063/1.4898704
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subjects Applied physics
Barriers
CHARGE STATES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Contact resistance
ELECTRIC CONTACTS
ELECTRONS
NOISE
QUANTUM DOTS
SILICON
TUNNEL EFFECT
title Ambipolar quantum dots in intrinsic silicon
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