Cascade type-I quantum well diode lasers emitting 960 mW near 3  μ m

The cascade pumping scheme reduced the threshold current density of high power type-I quantum well GaSb-based λ ∼ 3 μm diode lasers down to ∼100 A/cm2 at room temperature. Laser heterostructures had single GaInAsSb quantum well gain stages connected in series by means of GaSb/AlSb/InAs tunnel juncti...

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Bibliographic Details
Published in:Applied physics letters 2014-10, Vol.105 (16)
Main Authors: Shterengas, Leon, Liang, Rui, Kipshidze, Gela, Hosoda, Takashi, Belenky, Gregory, Bowman, Sherrie S., Tober, Richard L.
Format: Article
Language:English
Subjects:
APERTURES
Applied physics
Carrier recombination
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Continuous radiation
CONVERSION
CURRENT DENSITY
EFFICIENCY
Electrons
Energy conversion efficiency
GALLIUM ANTIMONIDES
Heterostructures
IMPURITIES
INDIUM ARSENIDES
Injectors
INTERFACES
Lasers
LAYERS
QUANTUM WELLS
RECOMBINATION
SCATTERING
SEMICONDUCTOR LASERS
TEMPERATURE RANGE 0273-0400 K
THICKNESS
THRESHOLD CURRENT
Threshold currents
TUNNEL EFFECT
Tunnel junctions
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Summary:The cascade pumping scheme reduced the threshold current density of high power type-I quantum well GaSb-based λ ∼ 3 μm diode lasers down to ∼100 A/cm2 at room temperature. Laser heterostructures had single GaInAsSb quantum well gain stages connected in series by means of GaSb/AlSb/InAs tunnel junctions followed by InAs/AlSb electron injectors. Devices with densely stacked two and three gain stages and 100-μm-wide aperture demonstrated peak power conversion efficiency of 16% and continuous wave output power of 960 mW. Corresponding narrow ridge lasers demonstrated above 100 mW of output power. The experiment showed that the bandwidth of the gain and its rate of increase with current depended strongly on the thickness of AlSb layer separating electron injectors from quantum wells. The possible impact of electron injector interfaces and ionized impurities on the carrier scattering and recombination in the active quantum well is discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4900506