Bismuth-induced phase control of GaAs nanowires grown by molecular beam epitaxy

In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth chan...

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Bibliographic Details
Published in:Applied physics letters 2014-10, Vol.105 (16)
Main Authors: Lu, Zhenyu, Zhang, Zhi, Chen, Pingping, Shi, Suixing, Yao, Luchi, Zhou, Chen, Zhou, Xiaohao, Zou, Jin, Lu, Wei
Format: Article
Language:English
Subjects:
Applied physics
BISMUTH
Catalysis
CATALYSTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFUSION LENGTH
DROPLETS
Epitaxial growth
Gallium arsenide
GALLIUM ARSENIDES
GOLD
INTERFACES
MOLECULAR BEAM EPITAXY
Molecular structure
NANOSCIENCE AND NANOTECHNOLOGY
NANOWIRES
Phase control
QUANTUM WIRES
SUPERSATURATION
SURFACES
Wurtzite
ZINC SULFIDES
Zincblende
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Summary:In this work, the crystal structure of GaAs nanowires grown by molecular beam epitaxy has been tailored only by bismuth without changing the growth temperature and V/III flux ratio. The introduction of bismuth can lead to the formation of zinc-blende GaAs nanowires, while the removal of bismuth changes the structure into a 4H polytypism before it turns back to the wurtzite phase eventually. The theoretical calculation shows that it is the steadiest for bismuth to adsorb on the GaAs(111)B surface compared to the liquid gold catalyst surface and the interface between the gold catalyst droplet and the nanowire, and these adsorbed bismuth could decrease the diffusion length of adsorbed Ga and hence the supersaturation of Ga in the gold catalyst droplet.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4898702