Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no therma...

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Bibliographic Details
Published in:Applied physics letters 2014-10, Vol.105 (16)
Main Authors: Ahn, Byung Du, Park, Jin-Seong, Chung, K. B.
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
BONDING
CARRIER MOBILITY
CHEMICAL BONDS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Conduction bands
ELECTRIC FIELDS
ELECTRONIC STRUCTURE
Food irradiation
GALLIUM COMPOUNDS
Hydrogen
HYDROGEN IONS
INDIUM COMPOUNDS
Indium gallium zinc oxide
Ion irradiation
Organic chemistry
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
Radiation dosage
RADIATION DOSES
Room temperature
Semiconductor devices
TEMPERATURE RANGE 0273-0400 K
Thin film transistors
THIN FILMS
TRANSISTORS
ZINC COMPOUNDS
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Description
Summary:Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4899144