Simulation of power – current characteristics of high-power semiconductor lasers emitting in the range 1.5 – 1.55 μm

We report the simulation of power-current characteristics of high-power semiconductor lasers emitting in the range 1.5-1.55 mu m. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier rec...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2014-02, Vol.44 (2), p.149-156
Main Authors: Gorlachuk, P V, Ivanov, A V, Kurnosov, V D, Kurnosov, K V, Romantsevich, V I, Simakov, V A, Chernov, R V
Format: Article
Language:English
Subjects:
Carrier recombination
Emittance
Heat transfer
Laser diodes
NEAR INFRARED RADIATION
PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Quantum electronics
RECOMBINATION
SEMICONDUCTOR LASERS
SIMULATION
Thermal resistance
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Summary:We report the simulation of power-current characteristics of high-power semiconductor lasers emitting in the range 1.5-1.55 mu m. A technique is described which allows one to determine the thermal resistance and characteristic temperatures of a laser diode. The radiative and nonradiative carrier recombination rates are evaluated. Simulation results are shown to agree well with experimental data.
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2014v044n02ABEH015251