Substrate-emitting semiconductor laser with a trapezoidal active region

Semiconductor lasers with a narrow directional pattern in the planes both parallel and perpendicular to the p - n junction are fabricated. To achieve a low radiation divergence in the p - n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directiona...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2014-01, Vol.44 (4), p.286-288
Main Authors: Dikareva, N.V., Nekorkin, S.M., Karzanova, M.V., Zvonkov, B.N., Aleshkin, V.Ya, Dubinov, A.A., Afonenko, A.A.
Format: Article
Language:English
Subjects:
active region
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Divergence
GALLIUM ARSENIDES
Joining
Lasers
leaky mode
Leaky modes
P-N JUNCTIONS
Planes
Quantum electronics
quantum well
semiconductor laser
SEMICONDUCTOR LASERS
SUBSTRATES
WAVEGUIDES
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Summary:Semiconductor lasers with a narrow directional pattern in the planes both parallel and perpendicular to the p - n junction are fabricated. To achieve a low radiation divergence in the p - n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p - n junction was ensured by the use of a leaky mode, through which more than 90 % of laser power was coupled out.
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2014v044n04ABEH015370