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Substrate-emitting semiconductor laser with a trapezoidal active region
Semiconductor lasers with a narrow directional pattern in the planes both parallel and perpendicular to the p - n junction are fabricated. To achieve a low radiation divergence in the p - n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directiona...
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Published in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 2014-01, Vol.44 (4), p.286-288 |
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cites | cdi_FETCH-LOGICAL-c391t-d91f310f2098cfadac1608f72565b0f1a684817c687b3a759be4eaf4730543cb3 |
container_end_page | 288 |
container_issue | 4 |
container_start_page | 286 |
container_title | Quantum electronics (Woodbury, N.Y.) |
container_volume | 44 |
creator | Dikareva, N.V. Nekorkin, S.M. Karzanova, M.V. Zvonkov, B.N. Aleshkin, V.Ya Dubinov, A.A. Afonenko, A.A. |
description | Semiconductor lasers with a narrow directional pattern in the planes both parallel and perpendicular to the p - n junction are fabricated. To achieve a low radiation divergence in the p - n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p - n junction was ensured by the use of a leaky mode, through which more than 90 % of laser power was coupled out. |
doi_str_mv | 10.1070/QE2014v044n04ABEH015370 |
format | article |
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To achieve a low radiation divergence in the p - n junction plane, the active region in this plane was designed in the form of a trapezium. The narrow directional pattern in the plane perpendicular to the p - n junction was ensured by the use of a leaky mode, through which more than 90 % of laser power was coupled out.</abstract><cop>United States</cop><pub>Turpion Ltd and the Russian Academy of Sciences</pub><doi>10.1070/QE2014v044n04ABEH015370</doi><tpages>3</tpages></addata></record> |
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issn | 1063-7818 1468-4799 |
language | eng |
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source | Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
subjects | active region CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Divergence GALLIUM ARSENIDES Joining Lasers leaky mode Leaky modes P-N JUNCTIONS Planes Quantum electronics quantum well semiconductor laser SEMICONDUCTOR LASERS SUBSTRATES WAVEGUIDES |
title | Substrate-emitting semiconductor laser with a trapezoidal active region |
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