Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope

The brightness and interference fringes of a spin-polarized electron beam extracted from a semiconductor photocathode excited by laser irradiation are directly measured via its use in a transmission electron microscope. The brightness was 3.8 × 107 A cm−2 sr−1 for a 30-keV beam energy with the polar...

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Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (19)
Main Authors: Kuwahara, Makoto, Kusunoki, Soichiro, Nambo, Yoshito, Saitoh, Koh, Jin, Xiuguang, Ujihara, Toru, Asano, Hidefumi, Takeda, Yoshikazu, Tanaka, Nobuo
Format: Article
Language:English
Subjects:
Applied physics
BRIGHTNESS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COHERENCE LENGTH
ELECTRON BEAMS
Electron microscopes
Electron spin
Electron wavepackets
ELECTRONS
INTERFERENCE
Interference fringes
Laser beams
LASER RADIATION
PHOTOCATHODES
POLARIZATION
SEMICONDUCTOR MATERIALS
SPIN ORIENTATION
TRANSMISSION ELECTRON MICROSCOPY
WAVE PACKETS
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Summary:The brightness and interference fringes of a spin-polarized electron beam extracted from a semiconductor photocathode excited by laser irradiation are directly measured via its use in a transmission electron microscope. The brightness was 3.8 × 107 A cm−2 sr−1 for a 30-keV beam energy with the polarization of 82%, which corresponds to 3.1 × 108 A cm−2 sr−1 for a 200-keV beam energy. The resulting electron beam exhibited a long coherence length at the specimen position due to the high parallelism of (1.7 ± 0.3) × 10−5 rad, which generated interference fringes representative of a first-order correlation using an electron biprism. The beam also had a high degeneracy of electron wavepacket of 4 × 10−6. Due to the high polarization, the high degeneracy and the long coherence length, the spin-polarized electron beam can enhance the antibunching effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901745