Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condi...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (19)
Main Authors: Hiroki, Masanobu, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Makimoto, Toshiki, Yamamoto, Hideki
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
Aluminum gallium nitrides
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
COPPER
Current voltage characteristics
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
ENERGY LOSSES
GALLIUM NITRIDES
HEATING
High electron mobility transistors
High temperature effects
LAYERS
SAPPHIRE
Semiconductor devices
SUBSTRATES
Technology transfer
TRANSISTORS
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4901938