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Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms

The influence of radiative recombination on the minority carrier lifetime in mid-wavelength InAs/InAsSb superlattices was investigated. From the lifetime's dependence on temperature, photon recycling, and carrier concentration, it was demonstrated that radiative lifetime dominates for carrier c...

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Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (19)
Main Authors: Höglund, L., Ting, D. Z., Soibel, A., Fisher, A., Khoshakhlagh, A., Hill, C. J., Keo, S., Gunapala, S. D.
Format: Article
Language:English
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Summary:The influence of radiative recombination on the minority carrier lifetime in mid-wavelength InAs/InAsSb superlattices was investigated. From the lifetime's dependence on temperature, photon recycling, and carrier concentration, it was demonstrated that radiative lifetime dominates for carrier concentrations >5 × 1014 cm−3, and Shockley-Read-Hall recombination starts to dominate the minority carrier lifetime for carrier concentrations
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4902022