Compositional tuning of atomic layer deposited MgZnO for thin film transistors

Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of the MgZnO is systematically modified by varying the ratio of MgO and ZnO deposition cycles. A blue-shift of the near band-edge photoluminesce...

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Bibliographic Details
Published in:Applied physics letters 2014-11, Vol.105 (20)
Main Authors: Wrench, J. S., Brunell, I. F., Chalker, P. R., Jin, J. D., Shaw, A., Mitrovic, I. Z., Hall, S.
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
Atomic layer epitaxy
DEPOSITION
LAYERS
MAGNESIUM
Magnesium oxide
MAGNESIUM OXIDES
MATERIALS SCIENCE
PHOTOLUMINESCENCE
Photovoltaic cells
Semiconductor devices
SILICA
Silicon dioxide
SILICON OXIDES
TEMPERATURE RANGE 0400-1000 K
Thin film transistors
THIN FILMS
Threshold voltage
TRANSISTORS
Zinc oxide
ZINC OXIDES
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Summary:Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of the MgZnO is systematically modified by varying the ratio of MgO and ZnO deposition cycles. A blue-shift of the near band-edge photoluminescence after post-deposition annealing at 300 °C indicates significant activation of the Mg dopant. A 7:1 ratio of ZnO:MgO deposition cycles was used to fabricate a device with a TFT channel width of 2000 μm and a channel length of 60 μm. This transistor yielded an effective saturation mobility of 4 cm2/V s and a threshold voltage of 7.1 V, respectively. The on/off ratio was 1.6×106 and the maximum interface state density at the ZnO/SiO2 interface is ∼6.5×1012 cm−2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4902389