Use of B{sub 2}O{sub 3} films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon

• Published in: Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2015-05, Vol.33 (3)
• Main Authors: Kalkofen, Bodo, Amusan, Akinwumi A., Bukhari, Muhammad S. K., Burte, Edmund P., Garke, Bernd, Lisker, Marco, Gargouri, Hassan
• Format: Article
• Language: English
• Subjects: ANNEALING; ANTIMONY OXIDES; BORON; BORON OXIDES; ELECTRON MICROSCOPES; GALLIUM NITRIDES; MATERIALS SCIENCE; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
• ISSN: 0734-2101; 1520-8559
• DOI: 10.1116/1.4917552

Plasma-assisted atomic layer deposition (PALD) was carried for growing thin boron oxide films onto silicon aiming at the formation of dopant sources for shallow boron doping of silicon by rapid thermal annealing (RTA). A remote capacitively coupled plasma source powered by GaN microwave oscillators was used for generating oxygen plasma in the PALD process with tris(dimethylamido)borane as boron containing precursor. ALD type growth was obtained; growth per cycle was highest with 0.13 nm at room temperature and decreased with higher temperature. The as-deposited films were highly unstable in ambient air and could be protected by capping with in-situ PALD grown antimony oxide films. After 16 weeks of storage in air, degradation of the film stack was observed in an electron microscope. The instability of the boron oxide, caused by moisture uptake, suggests the application of this film for testing moisture barrier properties of capping materials particularly for those grown by ALD. Boron doping of silicon was demonstrated using the uncapped PALD B{sub 2}O{sub 3} films for RTA processes without exposing them to air. The boron concentration in the silicon could be varied depending on the source layer thickness for very thin films, which favors the application of ALD for semiconductor doping processes.