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Site selectivity on chalcogen atoms in superconducting La(O,F)BiSSe

Single crystals of La(O,F)BiSSe were grown by using a CsCl flux method. Single crystal X-ray structural analysis reveals that the crystal structure is isostructural to the BiS2- or BiSe2-based compounds crystallizing with space group P4/nmm (lattice parameters a = 4.1110(2) Å, c = 13.6010(7) Å). How...

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Bibliographic Details
Published in:Applied physics letters 2015-03, Vol.106 (11)
Main Authors: Tanaka, Masashi, Yamaki, Takuma, Matsushita, Yoshitaka, Fujioka, Masaya, Denholme, Saleem J., Yamaguchi, Takahide, Takeya, Hiroyuki, Takano, Yoshihiko
Format: Article
Language:English
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Summary:Single crystals of La(O,F)BiSSe were grown by using a CsCl flux method. Single crystal X-ray structural analysis reveals that the crystal structure is isostructural to the BiS2- or BiSe2-based compounds crystallizing with space group P4/nmm (lattice parameters a = 4.1110(2) Å, c = 13.6010(7) Å). However, the S atoms are selectively occupied at the apical site of the Bi-SSe pyramids in the superconducting layer. The single crystals show a superconducting transition at around 4.2 K in the magnetic susceptibility and resistivity measurements. The superconducting anisotropic parameter is determined to be 34–35 from its upper critical magnetic field. The anisotropy is in the same range with that of other members of the La(O,F)BiCh2 (Ch = S, Se) family under ambient pressure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4915302