Solution-processed Al-chelated gelatin for highly transparent non-volatile memory applications

Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to...

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Bibliographic Details
Published in:Applied physics letters 2015-03, Vol.106 (12)
Main Authors: Chang, Yu-Chi, Wang, Yeong-Her
Format: Article
Language:English
Subjects:
ALUMINIUM
ALUMINIUM IONS
APPROXIMATIONS
CHELATES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
GELATIN
INDIUM COMPOUNDS
MEMORY DEVICES
RANDOMNESS
RETENTION
SOL-GEL PROCESS
SOLUTIONS
TEMPERATURE RANGE 0273-0400 K
TITANIUM OXIDES
VOLATILITY
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Summary:Using the biomaterial of Al-chelated gelatin (ACG) prepared by sol-gel method in the ITO/ACG/ITO structure, a highly transparent resistive random access memory (RRAM) was obtained. The transmittance of the fabricated device is approximately 83% at 550 nm while that of Al/gelatin/ITO is opaque. As to the ITO/gelatin/ITO RRAM, no resistive switching behavior can be seen. The ITO/ACG/ITO RRAM shows high ON/OFF current ratio (>105), low operation voltage, good uniformity, and retention characteristics at room temperature and 85 °C. The mechanism of the ACG-based memory devices is presented. The enhancement of these electrical properties can be attributed to the chelate effect of Al ions with gelatin. Results show that transparent ACG-based memory devices possess the potential for next-generation resistive memories and bio-electronic applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4916028