Band gaps of wurtzite Sc{sub x}Ga{sub 1−x}N alloys

Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure Sc{sub x}Ga{sub 1−x}N films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I{sub 1}- and I{sub 2}-type st...

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Bibliographic Details
Published in:Applied physics letters 2015-03, Vol.106 (13)
Main Authors: Tsui, H. C. L., Moram, M. A., Goff, L. E., Department of Physics, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, Rhode, S. K., Pereira, S., Beere, H. E., Farrer, I., Nicoll, C. A., Ritchie, D. A.
Format: Article
Language:English
Subjects:
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CUBIC LATTICES
ELECTRONIC STRUCTURE
ENERGY GAP
EPITAXY
EV RANGE
GALLIUM NITRIDES
LIGHT TRANSMISSION
NANOSTRUCTURES
SCANDIUM COMPOUNDS
SCANNING ELECTRON MICROSCOPY
STACKING FAULTS
TRANSMISSION ELECTRON MICROSCOPY
ZINC SULFIDES
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Summary:Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure Sc{sub x}Ga{sub 1−x}N films with 0 ≤ x ≤ 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I{sub 1}- and I{sub 2}-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for Sc{sub x}Ga{sub 1−x}N films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in Sc{sub x}Ga{sub 1−x}N band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4916679