Electrical activation and electron spin resonance measurements of arsenic implanted in silicon

The electrical activation of arsenic (As) implanted in Si is investigated with electron spin resonance (ESR), spreading resistance (SR), and secondary ion mass spectroscopy (SIMS). The As ions were implanted with a dose of 1 × 1012 cm−2 and subsequently annealed at various temperatures in the range...

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Bibliographic Details
Published in:Applied physics letters 2015-04, Vol.106 (14)
Main Authors: Hori, Masahiro, Uematsu, Masashi, Fujiwara, Akira, Ono, Yukinori
Format: Article
Language:English
Subjects:
Activation
ANNEALING
Applied physics
ARSENIC
ARSENIC IONS
Atom concentration
CONCENTRATION RATIO
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Conduction bands
DENSITY
ELECTRIC CONDUCTIVITY
Electron paramagnetic resonance
Electron spin
ELECTRON SPIN RESONANCE
ELECTRONS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
Secondary ion mass spectroscopy
SILICON
Spin resonance
TEMPERATURE DEPENDENCE
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Summary:The electrical activation of arsenic (As) implanted in Si is investigated with electron spin resonance (ESR), spreading resistance (SR), and secondary ion mass spectroscopy (SIMS). The As ions were implanted with a dose of 1 × 1012 cm−2 and subsequently annealed at various temperatures in the range of 500–1100 °C. The ESR measurements at 10 K show that the density of the As donor electrons for all the annealing temperatures is less than 10% of the As atom concentration measured by SIMS. The SR data indicate that the density of conduction band electrons is several times larger than that of the As donor electrons. These results strongly suggest that most of the As donor electrons are ESR inactive at low temperatures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4917295