High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm2/(V·s) at sheet charge d...

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Bibliographic Details
Published in:Applied physics letters 2015-04, Vol.106 (14)
Main Authors: Cheng, Jianpeng, Yang, Xuelin, Sang, Ling, Guo, Lei, Hu, Anqi, Xu, Fujun, Tang, Ning, Wang, Xinqiang, Shen, Bo
Format: Article
Language:English
Subjects:
ALUMINIUM NITRIDES
Aluminum gallium nitrides
Applied physics
Buffer layers
CHARGE DENSITY
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Dislocation density
EDGE DISLOCATIONS
ELECTRON MOBILITY
Electronic devices
FABRICATION
GALLIUM NITRIDES
HETEROJUNCTIONS
Heterostructures
INCLINATION
LAYERS
POTENTIALS
RELAXATION
SHEETS
SILICON
Silicon substrates
Strain relaxation
STRAINS
STRESSES
SUBSTRATES
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Summary:A large lattice-mismatch induced stress control technology with a low Al content AlGaN layer has been used to grow high quality GaN layers on 4-in. Si substrates. The use of this technology allows for high mobility AlGaN/GaN heterostructures with electron mobility of 2040 cm2/(V·s) at sheet charge density of 8.4 × 1012 cm−2. Strain relaxation and dislocation evolution mechanisms have been investigated. It is demonstrated that the large lattice mismatch between the low Al content AlGaN layer and AlN buffer layer could effectively promote the edge dislocation inclination with relatively large bend angles and therefore significantly reduce the dislocation density in the GaN epilayer. Our results show a great potential for fabrication of low-cost and high performance GaN-on-Si power devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4917504