Negative-T InGaN laser diodes and their degradation

We studied the InGaN laser diode, emitting in the blue region of the spectrum and characterized by a negative characteristic temperature T0. The corresponding decrease in the threshold current with the increase in temperature for this device is caused by the increased distance between the electron-b...

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Bibliographic Details
Published in:Applied physics letters 2015-04, Vol.106 (17)
Main Authors: Bojarska, Agata, Marona, Łucja, Makarowa, Irina, Czernecki, Robert, Leszczynski, Mike, Suski, Tadeusz, Perlin, Piotr
Format: Article
Language:English
Subjects:
CORRELATIONS
DEPLETION LAYER
ELECTRONS
GALLIUM NITRIDES
INDIUM COMPOUNDS
LASERS
NANOSCIENCE AND NANOTECHNOLOGY
QUANTUM WELLS
RECOMBINATION
RELIABILITY
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT
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Summary:We studied the InGaN laser diode, emitting in the blue region of the spectrum and characterized by a negative characteristic temperature T0. The corresponding decrease in the threshold current with the increase in temperature for this device is caused by the increased distance between the electron-blocking layer and the quantum wells. Because of the non-monotonic temperature dependence of laser parameters, we can demonstrate a correlation of the degradation rate with nonradiative part of the total device current. This result indicates the potential importance of the recombination processes occurring outside of the active region for the reliability of InGaN laser diodes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4918994