Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degr...

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Bibliographic Details
Published in:Applied physics letters 2015-04, Vol.106 (17)
Main Authors: Reid, Benjamin P. L., Kocher, Claudius, Zhu, Tongtong, Oehler, Fabrice, Chan, Christopher C. S., Oliver, Rachel A., Taylor, Robert A.
Format: Article
Language:English
Subjects:
Applied physics
CORRELATIONS
CRYSTAL STRUCTURE
CRYSTALS
Emission analysis
FINE STRUCTURE
GALLIUM NITRIDES
INDIUM COMPOUNDS
Linear polarization
NANOSCIENCE AND NANOTECHNOLOGY
PHOTOLUMINESCENCE
POLARIZATION
QUANTUM DOTS
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Summary:Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4919656