Magnetic properties of in-plane oriented barium hexaferrite thin films prepared by direct current magnetron sputtering

In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112¯0) sapphire (Al2O3) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering...

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Bibliographic Details
Published in:Journal of applied physics 2014-12, Vol.116 (24)
Main Authors: Zhang, Xiaozhi, Yue, Zhenxing, Meng, Siqin, Yuan, Lixin
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
Aluminum oxide
ANISOTROPY
ANNEALING
Applied physics
BARIUM COMPOUNDS
Barium hexaferrite
CRYSTAL STRUCTURE
Crystallography
Diffraction patterns
DIRECT CURRENT
Epitaxial growth
EPITAXY
FERRITES
HEMATITE
HYSTERESIS
Hysteresis loops
IRON OXIDES
Magnetic anisotropy
MAGNETIC PROPERTIES
Magnetron sputtering
MAGNETRONS
MATERIALS SCIENCE
Morphology
Photovoltaic cells
Pole figures
SAPPHIRE
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION
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Summary:In-plane c-axis oriented Ba-hexaferrite (BaM) thin films were prepared on a-plane (112¯0) sapphire (Al2O3) substrates by DC magnetron sputtering followed by ex-situ annealing. The DC magnetron sputtering was demonstrated to have obvious advantages over the traditionally used RF magnetron sputtering in sputtering rate and operation simplicity. The sputtering power had a remarkable influence on the Ba/Fe ratio, the hematite secondary phase, and the grain morphology of the as-prepared BaM films. Under 80 W of sputtering power, in-plane c-axis highly oriented BaM films were obtained. These films had strong magnetic anisotropy with high hysteresis loop squareness (Mr/Ms of 0.96) along the in-plane easy axis and low Mr/Ms of 0.03 along the in-plane hard axis. X-ray diffraction patterns and pole figures revealed that the oriented BaM films grew via an epitaxy-like growth process with the crystallographic relationship BaM (101¯0)//α-Fe2O3(112¯0)//Al2O3(112¯0).
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4905028