Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence

350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was hig...

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Bibliographic Details
Published in:Journal of applied physics 2014-12, Vol.116 (24)
Main Authors: Ponchel, F., Rémiens, D., Sama, N., Lasri, T.
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
CRYSTAL STRUCTURE
DIELECTRIC MATERIALS
ELECTRIC FIELDS
FINITE ELEMENT METHOD
GHZ RANGE
LAYERS
MICROSTRUCTURE
PERMITTIVITY
PEROVSKITE
POLYCRYSTALS
PZT
RELAXATION TIME
SPUTTERING
SUBSTRATES
THIN FILMS
TITANIUM OXIDES
X-RAY DIFFRACTION
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Summary:350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4904514