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Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence

350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was hig...

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Published in:	Journal of applied physics 2014-12, Vol.116 (24)
Main Authors:	Ponchel, F., Rémiens, D., Sama, N., Lasri, T.
Format:	Article
Language:	English
Subjects:	ALUMINIUM OXIDES CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COMPARATIVE EVALUATIONS CRYSTAL STRUCTURE DIELECTRIC MATERIALS ELECTRIC FIELDS FINITE ELEMENT METHOD GHZ RANGE LAYERS MICROSTRUCTURE PERMITTIVITY PEROVSKITE POLYCRYSTALS PZT RELAXATION TIME SPUTTERING SUBSTRATES THIN FILMS TITANIUM OXIDES X-RAY DIFFRACTION
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description	350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.
doi_str_mv	10.1063/1.4904514
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fullrecord	<record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_22399166</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22399166</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_223991663</originalsourceid><addsrcrecordid>eNqNjMFKw0AURQdRMGoX_YMBNwpNfC8zSTNutcVdu-jKTZlOXujIdCJ5IyiSf7dI3bu698K5R4gpQoFQqwcstAFdoT4TGUJj8nlVwbnIAErMGzM3l-KK-Q0AsVEmE4dnT4FcGryTAwX7aZPvo7TRhi_2LPtOrnd3r8M3f-wkFJUeZxt_Groe71e_XY0y7X2UnQ8HfpSLP2N3lLeypXeKLUVHN-Kis4FpcsprcbtcbJ5e8p6T37Lzidze9TEe_9uyVMZgXav_UT-CQE0d</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Ponchel, F. ; Rémiens, D. ; Sama, N. ; Lasri, T.</creator><creatorcontrib>Ponchel, F. ; Rémiens, D. ; Sama, N. ; Lasri, T.</creatorcontrib><description>350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4904514</identifier><language>eng</language><publisher>United States</publisher><subject>ALUMINIUM OXIDES ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; COMPARATIVE EVALUATIONS ; CRYSTAL STRUCTURE ; DIELECTRIC MATERIALS ; ELECTRIC FIELDS ; FINITE ELEMENT METHOD ; GHZ RANGE ; LAYERS ; MICROSTRUCTURE ; PERMITTIVITY ; PEROVSKITE ; POLYCRYSTALS ; PZT ; RELAXATION TIME ; SPUTTERING ; SUBSTRATES ; THIN FILMS ; TITANIUM OXIDES ; X-RAY DIFFRACTION</subject><ispartof>Journal of applied physics, 2014-12, Vol.116 (24)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,27903,27904</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22399166$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Ponchel, F.</creatorcontrib><creatorcontrib>Rémiens, D.</creatorcontrib><creatorcontrib>Sama, N.</creatorcontrib><creatorcontrib>Lasri, T.</creatorcontrib><title>Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence</title><title>Journal of applied physics</title><description>350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.</description><subject>ALUMINIUM OXIDES</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>CRYSTAL STRUCTURE</subject><subject>DIELECTRIC MATERIALS</subject><subject>ELECTRIC FIELDS</subject><subject>FINITE ELEMENT METHOD</subject><subject>GHZ RANGE</subject><subject>LAYERS</subject><subject>MICROSTRUCTURE</subject><subject>PERMITTIVITY</subject><subject>PEROVSKITE</subject><subject>POLYCRYSTALS</subject><subject>PZT</subject><subject>RELAXATION TIME</subject><subject>SPUTTERING</subject><subject>SUBSTRATES</subject><subject>THIN FILMS</subject><subject>TITANIUM OXIDES</subject><subject>X-RAY DIFFRACTION</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNjMFKw0AURQdRMGoX_YMBNwpNfC8zSTNutcVdu-jKTZlOXujIdCJ5IyiSf7dI3bu698K5R4gpQoFQqwcstAFdoT4TGUJj8nlVwbnIAErMGzM3l-KK-Q0AsVEmE4dnT4FcGryTAwX7aZPvo7TRhi_2LPtOrnd3r8M3f-wkFJUeZxt_Groe71e_XY0y7X2UnQ8HfpSLP2N3lLeypXeKLUVHN-Kis4FpcsprcbtcbJ5e8p6T37Lzidze9TEe_9uyVMZgXav_UT-CQE0d</recordid><startdate>20141228</startdate><enddate>20141228</enddate><creator>Ponchel, F.</creator><creator>Rémiens, D.</creator><creator>Sama, N.</creator><creator>Lasri, T.</creator><scope>OTOTI</scope></search><sort><creationdate>20141228</creationdate><title>Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence</title><author>Ponchel, F. ; Rémiens, D. ; Sama, N. ; Lasri, T.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_223991663</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>ALUMINIUM OXIDES</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>CRYSTAL STRUCTURE</topic><topic>DIELECTRIC MATERIALS</topic><topic>ELECTRIC FIELDS</topic><topic>FINITE ELEMENT METHOD</topic><topic>GHZ RANGE</topic><topic>LAYERS</topic><topic>MICROSTRUCTURE</topic><topic>PERMITTIVITY</topic><topic>PEROVSKITE</topic><topic>POLYCRYSTALS</topic><topic>PZT</topic><topic>RELAXATION TIME</topic><topic>SPUTTERING</topic><topic>SUBSTRATES</topic><topic>THIN FILMS</topic><topic>TITANIUM OXIDES</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ponchel, F.</creatorcontrib><creatorcontrib>Rémiens, D.</creatorcontrib><creatorcontrib>Sama, N.</creatorcontrib><creatorcontrib>Lasri, T.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ponchel, F.</au><au>Rémiens, D.</au><au>Sama, N.</au><au>Lasri, T.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence</atitle><jtitle>Journal of applied physics</jtitle><date>2014-12-28</date><risdate>2014</risdate><volume>116</volume><issue>24</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>350 nm-thick Perovskite PbZr{sub 0.54}Ti{sub 0.46}O{sub 3} (PZT) thin films were deposited on Al{sub 2}O{sub 3} substrates by sputtering with and without an additional 10-nm-thick TiO{sub x} buffer layer. X-ray diffraction patterns showed that in presence of TiO{sub x} buffer layer, PZT film was highly oriented along the (111) direction film, whereas the unbuffered, counterpart was polycrystalline. A full wave electromagnetic analysis using a vector finite element method was performed to determine the tunability and the complex permittivity up to 67 GHz. A comparison between the electromagnetic analysis and Cole-Cole relaxation model was proposed. Through an original study of the relaxation time as a function of the electric field, values, such as 2 ps and 0.6 ps, were estimated for E{sub DC} = 0 kV/cm and 235 kV/cm, respectively, and in both cases (111)-PZT and polycrystalline-PZT. The distribution of relaxation times is found to be larger for (111)-PZT film, which is probably related to the film microstructure.</abstract><cop>United States</cop><doi>10.1063/1.4904514</doi></addata></record>
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subjects	ALUMINIUM OXIDES CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS COMPARATIVE EVALUATIONS CRYSTAL STRUCTURE DIELECTRIC MATERIALS ELECTRIC FIELDS FINITE ELEMENT METHOD GHZ RANGE LAYERS MICROSTRUCTURE PERMITTIVITY PEROVSKITE POLYCRYSTALS PZT RELAXATION TIME SPUTTERING SUBSTRATES THIN FILMS TITANIUM OXIDES X-RAY DIFFRACTION
title	Dielectric relaxation analysis of Pb(Zr{sub 0.54},Ti{sub 0.46})O{sub 3} thin films: Electric field dependence
url	http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T19%3A53%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dielectric%20relaxation%20analysis%20of%20Pb(Zr%7Bsub%200.54%7D,Ti%7Bsub%200.46%7D)O%7Bsub%203%7D%20thin%20films:%20Electric%20field%20dependence&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Ponchel,%20F.&rft.date=2014-12-28&rft.volume=116&rft.issue=24&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.4904514&rft_dat=%3Costi%3E22399166%3C/osti%3E%3Cgrp_id%3Ecdi_FETCH-osti_scitechconnect_223991663%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true