Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content...

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Bibliographic Details
Published in:Journal of applied physics 2015-01, Vol.117 (1)
Main Authors: Yang, W. C., Wu, C. H., Tseng, Y. T., Chiu, S. Y., Cheng, K. Y.
Format: Article
Language:English
Subjects:
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
Emission spectra
Epitaxial growth
GALLIUM NITRIDES
INDIUM
INDIUM COMPOUNDS
Indium gallium nitrides
INTERFACES
LIQUID PHASE EPITAXY
Liquid phases
MOLECULAR BEAM EPITAXY
Phase separation
PHOTOLUMINESCENCE
PLASMA
QUANTUM WELLS
SURFACES
Temperature
TEMPERATURE DEPENDENCE
WAVELENGTHS
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Summary:The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4905419