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Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film
A method of creating tunable and programmable biaxial compressive strain in silicon nanomembranes (Si NMs) transferred onto a Kapton® HN polyimide film has been demonstrated. The programmable biaxial compressive strain (up to 0.54%) was generated utilizing a unique thermal property exhibited by the...
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Published in: | Applied physics letters 2015-05, Vol.106 (21) |
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container_title | Applied physics letters |
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creator | Kim, Munho Mi, Hongyi Cho, Minkyu Seo, Jung-Hun Zhou, Weidong Gong, Shaoqin Ma, Zhenqiang |
description | A method of creating tunable and programmable biaxial compressive strain in silicon nanomembranes (Si NMs) transferred onto a Kapton® HN polyimide film has been demonstrated. The programmable biaxial compressive strain (up to 0.54%) was generated utilizing a unique thermal property exhibited by the Kapton HN film, namely, it shrinks from its original size when exposed to elevated temperatures. The correlation between the strain and the annealing temperature was carefully investigated using Raman spectroscopy and high resolution X-ray diffraction. It was found that various amounts of compressive strains can be obtained by controlling the thermal annealing temperatures. In addition, a numerical model was used to evaluate the strain distribution in the Si NM. This technique provides a viable approach to forming in-plane compressive strain in NMs and offers a practical platform for further studies in strain engineering. |
doi_str_mv | 10.1063/1.4922043 |
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fullrecord | <record><control><sourceid>proquest_osti_</sourceid><recordid>TN_cdi_osti_scitechconnect_22402490</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2124739438</sourcerecordid><originalsourceid>FETCH-LOGICAL-c285t-6bf672138bdf620d748b0b52b8bcddd87d93dc6a041afa81ae97e995f43e79ae3</originalsourceid><addsrcrecordid>eNpF0MlKBDEQBuAgCo6jB98g4MlDj9l6yVHEDQY8OJ5jlgpm6E7apEect7cHBU9F8X8UxY_QJSUrShp-Q1dCMkYEP0ILStq24pR2x2hBCOFVI2t6is5K2c5rzThfoPfNLmrTAzZBfwfd4xCrsdcRsE3DmKGU8AW4TFmHOGdY49eAo45pgMHkg5ujWDzkDA6nAxhTvw9DcIB96IdzdOJ1X-Diby7R28P95u6pWr88Pt_drivLunqqGuObllHeGecbRlwrOkNMzUxnrHOua53kzjaaCKq97qgG2YKUtRccWqmBL9HV791UpqCKDRPYD5tiBDspxgRhQpJ_Neb0uYMyqW3a5Tg_phhlouVS8G5W17_K5lRKBq_GHAad94oSdahZUfVXM_8B01ZvGg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2124739438</pqid></control><display><type>article</type><title>Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP Journals (American Institute of Physics)</source><creator>Kim, Munho ; Mi, Hongyi ; Cho, Minkyu ; Seo, Jung-Hun ; Zhou, Weidong ; Gong, Shaoqin ; Ma, Zhenqiang</creator><creatorcontrib>Kim, Munho ; Mi, Hongyi ; Cho, Minkyu ; Seo, Jung-Hun ; Zhou, Weidong ; Gong, Shaoqin ; Ma, Zhenqiang</creatorcontrib><description>A method of creating tunable and programmable biaxial compressive strain in silicon nanomembranes (Si NMs) transferred onto a Kapton® HN polyimide film has been demonstrated. The programmable biaxial compressive strain (up to 0.54%) was generated utilizing a unique thermal property exhibited by the Kapton HN film, namely, it shrinks from its original size when exposed to elevated temperatures. The correlation between the strain and the annealing temperature was carefully investigated using Raman spectroscopy and high resolution X-ray diffraction. It was found that various amounts of compressive strains can be obtained by controlling the thermal annealing temperatures. In addition, a numerical model was used to evaluate the strain distribution in the Si NM. This technique provides a viable approach to forming in-plane compressive strain in NMs and offers a practical platform for further studies in strain engineering.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4922043</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ANNEALING ; Applied physics ; CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ; Compressive properties ; High temperature ; Kapton (trademark) ; MATERIALS SCIENCE ; Mathematical models ; NANOSTRUCTURES ; POLYAMIDES ; Polyimide resins ; RAMAN SPECTROSCOPY ; SILICON ; Strain distribution ; STRAINS ; Temperature ; THERMODYNAMIC PROPERTIES ; X ray spectra ; X-RAY DIFFRACTION</subject><ispartof>Applied physics letters, 2015-05, Vol.106 (21)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c285t-6bf672138bdf620d748b0b52b8bcddd87d93dc6a041afa81ae97e995f43e79ae3</citedby><cites>FETCH-LOGICAL-c285t-6bf672138bdf620d748b0b52b8bcddd87d93dc6a041afa81ae97e995f43e79ae3</cites><orcidid>0000-0002-0379-1886 ; 0000-0002-5039-2503 ; 0000-0002-0006-2063</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,782,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22402490$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Munho</creatorcontrib><creatorcontrib>Mi, Hongyi</creatorcontrib><creatorcontrib>Cho, Minkyu</creatorcontrib><creatorcontrib>Seo, Jung-Hun</creatorcontrib><creatorcontrib>Zhou, Weidong</creatorcontrib><creatorcontrib>Gong, Shaoqin</creatorcontrib><creatorcontrib>Ma, Zhenqiang</creatorcontrib><title>Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film</title><title>Applied physics letters</title><description>A method of creating tunable and programmable biaxial compressive strain in silicon nanomembranes (Si NMs) transferred onto a Kapton® HN polyimide film has been demonstrated. The programmable biaxial compressive strain (up to 0.54%) was generated utilizing a unique thermal property exhibited by the Kapton HN film, namely, it shrinks from its original size when exposed to elevated temperatures. The correlation between the strain and the annealing temperature was carefully investigated using Raman spectroscopy and high resolution X-ray diffraction. It was found that various amounts of compressive strains can be obtained by controlling the thermal annealing temperatures. In addition, a numerical model was used to evaluate the strain distribution in the Si NM. This technique provides a viable approach to forming in-plane compressive strain in NMs and offers a practical platform for further studies in strain engineering.</description><subject>ANNEALING</subject><subject>Applied physics</subject><subject>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</subject><subject>Compressive properties</subject><subject>High temperature</subject><subject>Kapton (trademark)</subject><subject>MATERIALS SCIENCE</subject><subject>Mathematical models</subject><subject>NANOSTRUCTURES</subject><subject>POLYAMIDES</subject><subject>Polyimide resins</subject><subject>RAMAN SPECTROSCOPY</subject><subject>SILICON</subject><subject>Strain distribution</subject><subject>STRAINS</subject><subject>Temperature</subject><subject>THERMODYNAMIC PROPERTIES</subject><subject>X ray spectra</subject><subject>X-RAY DIFFRACTION</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpF0MlKBDEQBuAgCo6jB98g4MlDj9l6yVHEDQY8OJ5jlgpm6E7apEect7cHBU9F8X8UxY_QJSUrShp-Q1dCMkYEP0ILStq24pR2x2hBCOFVI2t6is5K2c5rzThfoPfNLmrTAzZBfwfd4xCrsdcRsE3DmKGU8AW4TFmHOGdY49eAo45pgMHkg5ujWDzkDA6nAxhTvw9DcIB96IdzdOJ1X-Diby7R28P95u6pWr88Pt_drivLunqqGuObllHeGecbRlwrOkNMzUxnrHOua53kzjaaCKq97qgG2YKUtRccWqmBL9HV791UpqCKDRPYD5tiBDspxgRhQpJ_Neb0uYMyqW3a5Tg_phhlouVS8G5W17_K5lRKBq_GHAad94oSdahZUfVXM_8B01ZvGg</recordid><startdate>20150525</startdate><enddate>20150525</enddate><creator>Kim, Munho</creator><creator>Mi, Hongyi</creator><creator>Cho, Minkyu</creator><creator>Seo, Jung-Hun</creator><creator>Zhou, Weidong</creator><creator>Gong, Shaoqin</creator><creator>Ma, Zhenqiang</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope><orcidid>https://orcid.org/0000-0002-0379-1886</orcidid><orcidid>https://orcid.org/0000-0002-5039-2503</orcidid><orcidid>https://orcid.org/0000-0002-0006-2063</orcidid></search><sort><creationdate>20150525</creationdate><title>Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film</title><author>Kim, Munho ; Mi, Hongyi ; Cho, Minkyu ; Seo, Jung-Hun ; Zhou, Weidong ; Gong, Shaoqin ; Ma, Zhenqiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c285t-6bf672138bdf620d748b0b52b8bcddd87d93dc6a041afa81ae97e995f43e79ae3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ANNEALING</topic><topic>Applied physics</topic><topic>CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS</topic><topic>Compressive properties</topic><topic>High temperature</topic><topic>Kapton (trademark)</topic><topic>MATERIALS SCIENCE</topic><topic>Mathematical models</topic><topic>NANOSTRUCTURES</topic><topic>POLYAMIDES</topic><topic>Polyimide resins</topic><topic>RAMAN SPECTROSCOPY</topic><topic>SILICON</topic><topic>Strain distribution</topic><topic>STRAINS</topic><topic>Temperature</topic><topic>THERMODYNAMIC PROPERTIES</topic><topic>X ray spectra</topic><topic>X-RAY DIFFRACTION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Munho</creatorcontrib><creatorcontrib>Mi, Hongyi</creatorcontrib><creatorcontrib>Cho, Minkyu</creatorcontrib><creatorcontrib>Seo, Jung-Hun</creatorcontrib><creatorcontrib>Zhou, Weidong</creatorcontrib><creatorcontrib>Gong, Shaoqin</creatorcontrib><creatorcontrib>Ma, Zhenqiang</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Munho</au><au>Mi, Hongyi</au><au>Cho, Minkyu</au><au>Seo, Jung-Hun</au><au>Zhou, Weidong</au><au>Gong, Shaoqin</au><au>Ma, Zhenqiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film</atitle><jtitle>Applied physics letters</jtitle><date>2015-05-25</date><risdate>2015</risdate><volume>106</volume><issue>21</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A method of creating tunable and programmable biaxial compressive strain in silicon nanomembranes (Si NMs) transferred onto a Kapton® HN polyimide film has been demonstrated. The programmable biaxial compressive strain (up to 0.54%) was generated utilizing a unique thermal property exhibited by the Kapton HN film, namely, it shrinks from its original size when exposed to elevated temperatures. The correlation between the strain and the annealing temperature was carefully investigated using Raman spectroscopy and high resolution X-ray diffraction. It was found that various amounts of compressive strains can be obtained by controlling the thermal annealing temperatures. In addition, a numerical model was used to evaluate the strain distribution in the Si NM. This technique provides a viable approach to forming in-plane compressive strain in NMs and offers a practical platform for further studies in strain engineering.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4922043</doi><orcidid>https://orcid.org/0000-0002-0379-1886</orcidid><orcidid>https://orcid.org/0000-0002-5039-2503</orcidid><orcidid>https://orcid.org/0000-0002-0006-2063</orcidid></addata></record> |
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subjects | ANNEALING Applied physics CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Compressive properties High temperature Kapton (trademark) MATERIALS SCIENCE Mathematical models NANOSTRUCTURES POLYAMIDES Polyimide resins RAMAN SPECTROSCOPY SILICON Strain distribution STRAINS Temperature THERMODYNAMIC PROPERTIES X ray spectra X-RAY DIFFRACTION |
title | Tunable biaxial in-plane compressive strain in a Si nanomembrane transferred on a polyimide film |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T11%3A22%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tunable%20biaxial%20in-plane%20compressive%20strain%20in%20a%20Si%20nanomembrane%20transferred%20on%20a%20polyimide%20film&rft.jtitle=Applied%20physics%20letters&rft.au=Kim,%20Munho&rft.date=2015-05-25&rft.volume=106&rft.issue=21&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4922043&rft_dat=%3Cproquest_osti_%3E2124739438%3C/proquest_osti_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c285t-6bf672138bdf620d748b0b52b8bcddd87d93dc6a041afa81ae97e995f43e79ae3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2124739438&rft_id=info:pmid/&rfr_iscdi=true |