Radiation and bias switch-induced charge dynamics in Al{sub 2}O{sub 3}-based metal-oxide-semiconductor structures

Charge trapping dynamics induced by exposition to γ-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling b...

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Bibliographic Details
Published in:Journal of applied physics 2014-11, Vol.116 (17)
Main Authors: Sambuco Salomone, L., Kasulin, A., Carbonetto, S. H., Garcia-Inza, M. A., Redin, E. G., Berbeglia, F., Lipovetzky, J., Faigón, A., Consejo Nacional de Investigaciones Científicas y Técnicas, Campabadal, F.
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
CAPACITANCE
CAPACITORS
CAPTURE
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COBALT 60
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ELECTRONS
IRRADIATION
LAYERS
METALS
SEMICONDUCTOR MATERIALS
SILICON OXIDES
TRAPPING
TUNNEL EFFECT
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Summary:Charge trapping dynamics induced by exposition to γ-ray ({sup 60}Co) radiation and bias switching in MOS capacitors with atomic layer deposited Al{sub 2}O{sub 3} as insulating layer was studied. Electrical characterization prior to irradiation showed voltage instabilities due to electron tunneling between the substrate and preexisting defects inside the dielectric layer. Real-time capacitance-voltage (C-V) measurements during irradiation showed two distinct regimes: For short times, the response is strongly bias dependent and linear with log(t), consistent with electron trapping/detrapping; for long times, the voltage shift is dominated by the radiation-induced hole capture being always negative and linear with dose. A simple model that takes into account these two phenomena can successfully reproduce the observed results.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4900851