Mueller matrix ellipsometric detection of profile asymmetry in nanoimprinted grating structures

Mueller matrix ellipsometry (MME) is applied to detect foot-like asymmetry encountered in nanoimprint lithography (NIL) processes. We present both theoretical and experimental results which show that MME has good sensitivity to both the magnitude and direction of asymmetric profiles. The physics beh...

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Bibliographic Details
Published in:Journal of applied physics 2014-11, Vol.116 (19)
Main Authors: Chen, Xiuguo, Zhang, Chuanwei, Liu, Shiyuan, Jiang, Hao, Ma, Zhichao, Xu, Zhimou
Format: Article
Language:English
Subjects:
Applied physics
ASYMMETRY
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
COMPARATIVE EVALUATIONS
DEPOLARIZATION
DETECTION
DIFFRACTION
ELLIPSOMETRY
GRATINGS
Gratings (spectra)
MONITORING
NANOSCIENCE AND NANOTECHNOLOGY
Nanotechnology
POTENTIALS
Reciprocity
Reciprocity theorem
SCANNING ELECTRON MICROSCOPY
SENSITIVITY
SYMMETRY
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Summary:Mueller matrix ellipsometry (MME) is applied to detect foot-like asymmetry encountered in nanoimprint lithography (NIL) processes. We present both theoretical and experimental results which show that MME has good sensitivity to both the magnitude and direction of asymmetric profiles. The physics behind the use of MME for asymmetry detection is the breaking of electromagnetic reciprocity theorem for the zeroth-order diffraction of asymmetric gratings. We demonstrate that accurate characterization of asymmetric nanoimprinted gratings can be achieved by performing MME measurements in a conical mounting with the plane of incidence parallel to grating lines and meanwhile incorporating depolarization effects into the optical model. The comparison of MME-extracted asymmetric profile with the measurement by cross-sectional scanning electron microscopy also reveals the strong potential of this technique for in-line monitoring NIL processes, where symmetric structures are desired.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4902154