Origin of major donor states in In–Ga–Zn oxide

To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (VO), carrier concentration, and conductivity are investiga...

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Bibliographic Details
Published in:Journal of applied physics 2014-12, Vol.116 (21)
Main Authors: Nakashima, Motoki, Oota, Masashi, Ishihara, Noritaka, Nonaka, Yusuke, Hirohashi, Takuya, Takahashi, Masahiro, Yamazaki, Shunpei, Obonai, Toshimitsu, Hosaka, Yasuharu, Koezuka, Junichi
Format: Article
Language:English
Subjects:
ABUNDANCE
Applied physics
Carrier density
DESORPTION
First principles
Gallium
HALL EFFECT
HARD X RADIATION
Indium gallium zinc oxide
INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
ORIGIN
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
Secondary ion mass spectroscopy
Spectrum analysis
Thermal desorption spectroscopy
THIN FILMS
X ray spectra
Zinc oxide
ZINC OXIDES
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Summary:To clarify the origin of the major donor states in indium gallium zinc oxide (IGZO), we report measurement results and an analysis of several physical properties of IGZO thin films. Specifically, the concentration of H atoms and O vacancies (VO), carrier concentration, and conductivity are investigated by hard X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, thermal desorption spectroscopy, and Hall effect measurements. The results of these experiments suggest that the origin of major donor states is H occupancy of VO sites. Furthermore, we use first-principles calculations to investigate the influence of the coexistence of VO and H in crystalline InGaO3(ZnO)m (m = 1). The results indicate that when H is trapped in VO, a stable complex is created that serves as a shallow-level donor.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4902859