Loading…

Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

Here, we demonstrate X-ray fitting through kinematical simulations of the intensity profiles of symmetric reflections for epitaxial compositionally graded layers of AlGaN grown by molecular beam epitaxy pseudomorphically on [0001]-oriented GaN substrates. These detailed simulations depict obvious di...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2014-12, Vol.116 (22)
Main Authors: Kuchuk, A. V., Stanchu, H. V., Li, Chen, Ware, M. E., Mazur, Yu. I., Kladko, V. P., Belyaev, A. E., Salamo, G. J.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Here, we demonstrate X-ray fitting through kinematical simulations of the intensity profiles of symmetric reflections for epitaxial compositionally graded layers of AlGaN grown by molecular beam epitaxy pseudomorphically on [0001]-oriented GaN substrates. These detailed simulations depict obvious differences between changes in thickness, maximum concentration, and concentration profile of the graded layers. Through comparison of these simulations with as-grown samples, we can reliably determine these parameters, most important of which are the profiles of the concentration and strain which determine much of the electrical properties of the film. In addition to learning about these parameters for the characterization of thin film properties, these fitting techniques create opportunities to calibrate growth rates and control composition profiles of AlGaN layers with a single growth rather than multiple growths as has been done traditionally.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4904083