Observation of weak carrier localization in green emitting InGaN/GaN multi-quantum well structure

Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in...

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Bibliographic Details
Published in:Journal of applied physics 2015-04, Vol.117 (14)
Main Authors: Mohanta, Antaryami, Wang, Shiang-Fu, Young, Tai-Fa, Yeh, Ping-Hung, Ling, Dah-Chin, Lee, Meng-En, Jang, Der-Jun
Format: Article
Language:English
Subjects:
Applied physics
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
EMISSION SPECTROSCOPY
FLUCTUATIONS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM NITRIDES
LAYERS
Localization
Multi Quantum Wells
PHOTOLUMINESCENCE
POTENTIALS
QUANTUM WELLS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION
TRANSMISSION ELECTRON MICROSCOPY
Variation
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Summary:Green emitting InGaN/GaN multi-quantum well samples were investigated using transmission electron microscopy, photoluminescence (PL), and time-resolved photoluminescence (TRPL) spectroscopy. Weak carrier localization with characteristic energy of ∼12 meV due to an inhomogeneous distribution of In in the InGaN quantum (QW) layer is observed. The temperature dependence of the PL peak energy exhibits S-shape phenomenon and is comparatively discussed within the framework of the Varshni's empirical formula. The full width at half maximum of the PL emission band shows an increasing-decreasing-increasing behavior with increasing temperature arising from the localized states caused by potential fluctuations. The radiative life time, τr, extracted from the TRPL profile shows ∼T3/2 dependence on temperature above 200 K, which confirms the absence of the effect of carrier localization at room temperature.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4917217