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Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The sa...

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Bibliographic Details
Published in:Journal of applied physics 2015-05, Vol.117 (17)
Main Authors: Maryško, M., Hejtmánek, J., Laguta, V., Sofer, Z., Sedmidubský, D., Šimek, P., Veselý, M., Mikulics, M., Buchal, C., Macková, A., Malínský, P., Wilhelm, R. A.
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Language:English
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Summary:The SQUID magnetic measurements were performed on the GaN films prepared by metal-organic vapour phase epitaxy and implanted by Tb3+, Tm3+, Sm3+, and Ho3+ ions. The sapphire substrate was checked by the electron paramagnetic resonance method which showed a content of Cr3+ and Fe3+ impurities. The samples 5 × 5 mm2 were positioned in the classical straws and within an estimated accuracy of 10−6 emu, no ferromagnetic moment was detected in the temperature region of 2–300 K. The paramagnetic magnetization was studied for parallel and perpendicular orientation. In the case of GaN:Tb sample, at T = 2 K, a pronounced anisotropy with the easy axis perpendicular to the film was observed which can be explained by the lowest quasi-doublet state of the non-Kramers Tb3+ ion. The Weiss temperature deduced from the susceptibility data using the Curie-Weiss (C-W) law was found to depend substantially on the magnetic field.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4916761