In operandi observation of dynamic annealing: A case study of boron in germanium nanowire devices

We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing abil...

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Bibliographic Details
Published in:Applied physics letters 2015-06, Vol.106 (23)
Main Authors: Koleśnik-Gray, Maria M., Sorger, Christian, Biswas, Subhajit, Holmes, Justin D., Weber, Heiko B., Krstić, Vojislav
Format: Article
Language:English
Subjects:
ANNEALING
Applied physics
BORON
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Dynamic annealing
ELECTRIC CONTACTS
ELECTRICAL PROPERTIES
GERMANIUM
Ion implantation
NANOWIRES
PHYSICAL RADIATION EFFECTS
Radiation damage
TEMPERATURE RANGE 0273-0400 K
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Summary:We report on the implantation of boron in individual, electrically contacted germanium nanowires with varying diameter and present a technique that monitors the electrical properties of a single device during implantation of ions. This method gives improved access to study the dynamic annealing ability of the nanowire at room temperature promoted by its quasi-one-dimensional confinement. Based on electrical data, we find that the dopant activation efficiency is nontrivially diameter dependent. As the diameter decreases, a transition from a pronounced dynamic-annealing to a radiation-damage dominated regime is observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4922527