Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon. High quality GaAs nanowires were grown on V-grooved Si (001) substrates using the selective aspect ratio trapping conc...

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Bibliographic Details
Published in:Applied physics letters 2015-02, Vol.106 (7)
Main Authors: Li, Qiang, Ng, Kar Wei, Lau, Kei May
Format: Article
Language:English
Subjects:
Applied physics
ASPECT RATIO
Bulk density
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
Electronic devices
GALLIUM ARSENIDES
NANOWIRES
NEUTRON DIFFRACTION
Photonics
Photovoltaic cells
PHOTOVOLTAIC EFFECT
SILICON
Silicon dioxide
Silicon substrates
Solar cells
STACKING FAULTS
SUBSTRATES
THIN FILMS
TRAPPING
X-RAY DIFFRACTION
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Summary:We report the use of highly ordered, dense, and regular arrays of in-plane GaAs nanowires as building blocks to produce antiphase-domain-free GaAs thin films on exact (001) silicon. High quality GaAs nanowires were grown on V-grooved Si (001) substrates using the selective aspect ratio trapping concept. The 4.1% lattice mismatch has been accommodated by the initial GaAs, a few nanometer-thick with high density stacking faults. The bulk of the GaAs wires exhibited smooth facets and a low defect density. An unusual defect trapping mechanism by a “tiara”-like structure formed by Si undercuts was discovered. As a result, we were able to grow large-area antiphase-domain-free GaAs thin films out of the nanowires without using SiO2 sidewalls for defect termination. Analysis from XRD ω-rocking curves yielded full-width-at-half-maximum values of 238 and 154 arc sec from 900 to 2000 nm GaAs thin films, respectively, indicating high crystalline quality. The growth scheme in this work offers a promising path towards integrated III-V electronic, photonic, or photovoltaic devices on large scale silicon platform.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4913432