Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well

We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al2O3, as an insulator, we obtain strongly reduced threshold voltages clo...

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Bibliographic Details
Published in:Applied physics letters 2015-03, Vol.106 (9)
Main Authors: Melnikov, M. Yu, Shashkin, A. A., Dolgopolov, V. T., Huang, S.-H., Liu, C. W., Kravchenko, S. V.
Format: Article
Language:English
Subjects:
ALUMINIUM OXIDES
Aluminum oxide
Applied physics
ELECTRIC POTENTIAL
ELECTRON GAS
GERMANIUM SILICIDES
HETEROJUNCTIONS
Heterostructures
NANOSCIENCE AND NANOTECHNOLOGY
QUANTUM WELLS
RANDOMNESS
SILICON
Silicon germanides
SILICON OXIDES
SMALL ANGLE SCATTERING
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS
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Summary:We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al2O3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4914007