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Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis
In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al conce...
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| Published in: | Journal of applied physics 2015-01, Vol.117 (2) |
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| Language: | English |
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| container_title | Journal of applied physics |
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| creator | Shasti, M. Mortezaali, A. Dariani, R. S. |
| description | In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism. |
| doi_str_mv | 10.1063/1.4905416 |
| format | article |
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S.</creator><creatorcontrib>Shasti, M. ; Mortezaali, A. ; Dariani, R. S.</creatorcontrib><description>In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4905416</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>ALUMINIUM ; ALUMINIUM COMPOUNDS ; Aluminum ; Carrier transport ; COMPARATIVE EVALUATIONS ; CONCENTRATION RATIO ; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ; Current voltage characteristics ; DOPED MATERIALS ; ELECTRIC CONDUCTIVITY ; Electrodes ; HETEROJUNCTIONS ; ILLUMINANCE ; Illumination ; LAYERS ; Morphology ; P-TYPE CONDUCTORS ; PHOTODETECTORS ; Photodiodes ; Photoelectric effect ; Photoelectric emission ; Photometers ; PYROLYSIS ; SCANNING ELECTRON MICROSCOPY ; SILICON ; Spray pyrolysis ; SURFACES ; Ultraviolet detectors ; ULTRAVIOLET RADIATION ; X-RAY DIFFRACTION ; Zinc oxide ; ZINC OXIDES</subject><ispartof>Journal of applied physics, 2015-01, Vol.117 (2)</ispartof><rights>2015 AIP Publishing LLC.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-e9c3991f1dd2026a7f652a87a931af7038d06e121bdaabc9a44ec65ceb1559893</citedby><cites>FETCH-LOGICAL-c320t-e9c3991f1dd2026a7f652a87a931af7038d06e121bdaabc9a44ec65ceb1559893</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27924,27925</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22412799$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Shasti, M.</creatorcontrib><creatorcontrib>Mortezaali, A.</creatorcontrib><creatorcontrib>Dariani, R. S.</creatorcontrib><title>Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis</title><title>Journal of applied physics</title><description>In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.</description><subject>ALUMINIUM</subject><subject>ALUMINIUM COMPOUNDS</subject><subject>Aluminum</subject><subject>Carrier transport</subject><subject>COMPARATIVE EVALUATIONS</subject><subject>CONCENTRATION RATIO</subject><subject>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</subject><subject>Current voltage characteristics</subject><subject>DOPED MATERIALS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>Electrodes</subject><subject>HETEROJUNCTIONS</subject><subject>ILLUMINANCE</subject><subject>Illumination</subject><subject>LAYERS</subject><subject>Morphology</subject><subject>P-TYPE CONDUCTORS</subject><subject>PHOTODETECTORS</subject><subject>Photodiodes</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Photometers</subject><subject>PYROLYSIS</subject><subject>SCANNING ELECTRON MICROSCOPY</subject><subject>SILICON</subject><subject>Spray pyrolysis</subject><subject>SURFACES</subject><subject>Ultraviolet detectors</subject><subject>ULTRAVIOLET RADIATION</subject><subject>X-RAY DIFFRACTION</subject><subject>Zinc oxide</subject><subject>ZINC OXIDES</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNpNkb1OAzEQhC0EEiFQ8AaWqCiOeH2_LqOIPylSCkgKGsuxfYqjnH3YvuIehzfFISmoVtr5ZjWrQegeyBOQKp_BU8FIWUB1gSZAGpbVZUku0YQQClnDanaNbkLYEwLQ5GyCfhau64U3wVnsWiyF90Z7HL2woXc-4k7LnbAmdHiwKinrzWxjAjaHw9AZK6JJRmOxsHj-tcL9zkWndNQyOp-W6izM-uzD4F0SvNsPVv7ZTrBJPO69U4PUCm9HHHovRtyP3h3GYMItumrFIei785yi9cvz5-ItW65e3xfzZSZzSmKmmcwZgxaUooRWom6rkoqmFiwH0dYkbxSpNFDYKiG2komi0LIqpd5CWbKG5VP0cLrrQjQ8SJOe2ElnbfqFU1oArdk_KiX-HnSIfO8Gb1MwToEWrARSHKnHEyW9C8HrlvfedMKPHAg_9sSBn3vKfwEsXodJ</recordid><startdate>20150114</startdate><enddate>20150114</enddate><creator>Shasti, M.</creator><creator>Mortezaali, A.</creator><creator>Dariani, R. S.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>OTOTI</scope></search><sort><creationdate>20150114</creationdate><title>Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis</title><author>Shasti, M. ; Mortezaali, A. ; Dariani, R. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-e9c3991f1dd2026a7f652a87a931af7038d06e121bdaabc9a44ec65ceb1559893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>ALUMINIUM</topic><topic>ALUMINIUM COMPOUNDS</topic><topic>Aluminum</topic><topic>Carrier transport</topic><topic>COMPARATIVE EVALUATIONS</topic><topic>CONCENTRATION RATIO</topic><topic>CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY</topic><topic>Current voltage characteristics</topic><topic>DOPED MATERIALS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>Electrodes</topic><topic>HETEROJUNCTIONS</topic><topic>ILLUMINANCE</topic><topic>Illumination</topic><topic>LAYERS</topic><topic>Morphology</topic><topic>P-TYPE CONDUCTORS</topic><topic>PHOTODETECTORS</topic><topic>Photodiodes</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Photometers</topic><topic>PYROLYSIS</topic><topic>SCANNING ELECTRON MICROSCOPY</topic><topic>SILICON</topic><topic>Spray pyrolysis</topic><topic>SURFACES</topic><topic>Ultraviolet detectors</topic><topic>ULTRAVIOLET RADIATION</topic><topic>X-RAY DIFFRACTION</topic><topic>Zinc oxide</topic><topic>ZINC OXIDES</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shasti, M.</creatorcontrib><creatorcontrib>Mortezaali, A.</creatorcontrib><creatorcontrib>Dariani, R. S.</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>OSTI.GOV</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shasti, M.</au><au>Mortezaali, A.</au><au>Dariani, R. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis</atitle><jtitle>Journal of applied physics</jtitle><date>2015-01-14</date><risdate>2015</risdate><volume>117</volume><issue>2</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Si photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.4905416</doi><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of applied physics, 2015-01, Vol.117 (2) |
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| language | eng |
| recordid | cdi_osti_scitechconnect_22412799 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| subjects | ALUMINIUM ALUMINIUM COMPOUNDS Aluminum Carrier transport COMPARATIVE EVALUATIONS CONCENTRATION RATIO CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Current voltage characteristics DOPED MATERIALS ELECTRIC CONDUCTIVITY Electrodes HETEROJUNCTIONS ILLUMINANCE Illumination LAYERS Morphology P-TYPE CONDUCTORS PHOTODETECTORS Photodiodes Photoelectric effect Photoelectric emission Photometers PYROLYSIS SCANNING ELECTRON MICROSCOPY SILICON Spray pyrolysis SURFACES Ultraviolet detectors ULTRAVIOLET RADIATION X-RAY DIFFRACTION Zinc oxide ZINC OXIDES |
| title | Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis |
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