Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the cha...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2015-06, Vol.117 (21)
Main Authors: Varade, Vaibhav, Jagtap, Amardeep M., Anjaneyulu, P., Koteswara Rao, K. S. R., Ramesh, K. P., Menon, R.
Format: Article
Language:English
Subjects:
Applied physics
CADMIUM
Cadmium telluride
CADMIUM TELLURIDES
Charge injection
Charge transfer
COMPARATIVE EVALUATIONS
Current voltage characteristics
ELECTRIC FIELDS
ELECTRIC POTENTIAL
Hybrid composites
ILLUMINANCE
INTERFACES
Intermetallic compounds
NANOSCIENCE AND NANOTECHNOLOGY
ORGANIC SEMICONDUCTORS
PHOTOCONDUCTIVITY
PHOTOLUMINESCENCE
Photovoltaic cells
QUANTUM DOTS
Tellurides
TEMPERATURE DEPENDENCE
THIN FILMS
TUNNEL EFFECT
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Temperature and photo-dependent current–voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT:PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler–Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (∼ 400%), which is attributed to the charge transfer phenomena. The effective barrier height (ΦB ≈ 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4922128