Hot-electron energy relaxation time in Ga-doped ZnO films

Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hot-electron noise measurements at room temperature. The relaxation time increases from ∼0.17 ps to ∼1.8 ps when the electron density increases from 1.4 × 1017 cm−3 to 1.3 × 1020 cm−3. A local minimum is res...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2015-02, Vol.117 (6)
Main Authors: Šermukšnis, E., Liberis, J., Ramonas, M., Matulionis, A., Toporkov, M., Liu, H. Y., Avrutin, V., Özgür, Ü., Morkoç, H.
Format: Article
Language:English
Subjects:
ABSORPTION
Applied physics
Computer simulation
COMPUTERIZED SIMULATION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRON DENSITY
Electron energy
ELECTRONS
Epitaxial layers
EPITAXY
GALLIUM COMPOUNDS
LAYERS
LUMINESCENCE
MONTE CARLO METHOD
PHONONS
PLASMONS
RELAXATION TIME
TIME RESOLUTION
Zinc oxide
ZINC OXIDES
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Hot-electron energy relaxation time is deduced for Ga-doped ZnO epitaxial layers from pulsed hot-electron noise measurements at room temperature. The relaxation time increases from ∼0.17 ps to ∼1.8 ps when the electron density increases from 1.4 × 1017 cm−3 to 1.3 × 1020 cm−3. A local minimum is resolved near an electron density of 1.4 × 1019 cm−3. The longest energy relaxation time (1.8 ps), observed at the highest electron density, is in good agreement with the published values obtained by optical time-resolved luminescence and absorption experiments. Monte Carlo simulations provide a qualitative interpretation of our observations if hot-phonon accumulation is taken into account. The local minimum of the electron energy relaxation time is explained by the ultrafast plasmon-assisted decay of hot phonons in the vicinity of the plasmon–LO-phonon resonance.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4907907