Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in contact with the graphene to the one obtained using tunnel contacts. Although a sizeable spin signal (...

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Bibliographic Details
Published in:Journal of applied physics 2015-02, Vol.117 (8)
Main Authors: Cubukcu, M., Martin, M.-B., Laczkowski, P., Vergnaud, C., Marty, A., Attané, J.-P., Seneor, P., Anane, A., Deranlot, C., Fert, A., Auffret, S., Ducruet, C., Notin, L., Vila, L., Jamet, M.
Format: Article
Language:English
Subjects:
ALUMINIUM
ALUMINIUM OXIDES
Aluminum oxide
Applied physics
Barriers
CHEMICAL VAPOR DEPOSITION
COBALT
COMPARATIVE EVALUATIONS
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Contact resistance
DIFFUSION BARRIERS
Dispersion
ELECTRIC CONDUCTIVITY
Ferromagnetism
GRAPHENE
LAYERS
MAGNESIUM
Magnesium oxide
MAGNESIUM OXIDES
OXIDATION
Physics
PLASMA
SPIN
Spin valves
SPUTTERING
Superconductors (materials)
VALVES
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Description
Summary:We report spin transport in CVD graphene-based lateral spin valves using different magnetic contacts. We compared the spin signal amplitude measured on devices where the cobalt layer is directly in contact with the graphene to the one obtained using tunnel contacts. Although a sizeable spin signal (up to ∼2 Ω) is obtained with direct contacts, the signal is strongly enhanced (∼400 Ω) by inserting a tunnel barrier. In addition, we studied the resistance-area product (R.A) of a variety of contacts on CVD graphene. In particular, we compared the R.A products of alumina and magnesium oxide tunnel barriers grown by sputtering deposition of aluminum or magnesium and subsequent natural oxidation under pure oxygen atmosphere or by plasma. When using an alumina tunnel barrier on CVD graphene, the R.A product is high and exhibits a large dispersion. This dispersion can be highly reduced by using a magnesium oxide tunnel barrier, as for the R.A value. This study gives insight in the material quest for reproducible and efficient spin injection in CVD graphene.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4913710