Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105 , 193509 (2014)]

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Bibliographic Details
Published in:Applied physics letters 2015-01, Vol.106 (4)
Main Authors: Hiroki, Masanobu, Kumakura, Kazuhide, Kobayashi, Yasuyuki, Akasaka, Tetsuya, Makimoto, Toshiki, Yamamoto, Hideki
Format: Article
Language:English
Subjects:
ALUMINIUM COMPOUNDS
BORON NITRIDES
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRON MOBILITY
GALLIUM NITRIDES
SUBSTRATES
TRANSISTORS
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ISSN:0003-6951
1077-3118
DOI:10.1063/1.4906268