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Hysteresis-free high-temperature precise bimorph actuators produced by direct bonding of lithium niobate wafers

The current paper presents a piezoelectric bimorph actuator produced by direct bonding of lithium niobate wafers with the mirrored Y and Z axes. Direct bonding technology allowed to fabricate bidomain plate with precise positioning of ideally flat domain boundary. By optimizing the cutting angle (12...

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Bibliographic Details
Published in:Applied physics letters 2015-02, Vol.106 (5)
Main Authors: Shur, V. Ya, Baturin, I. S., Mingaliev, E. A., Zorikhin, D. V., Udalov, A. R., Greshnyakov, E. D.
Format: Article
Language:English
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Summary:The current paper presents a piezoelectric bimorph actuator produced by direct bonding of lithium niobate wafers with the mirrored Y and Z axes. Direct bonding technology allowed to fabricate bidomain plate with precise positioning of ideally flat domain boundary. By optimizing the cutting angle (128° Y-cut), the piezoelectric constant became as large as 27.3 pC/N. Investigation of voltage dependence of bending displacement confirmed that bimorph actuator has excellent linearity and hysteresis-free. Decrease of the applied voltage down to mV range showed the perfect linearity up to the sub-nm deflection amplitude. The frequency and temperature dependences of electromechanical transmission coefficient in wide temperature range (from 300 to 900 K) were investigated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4907679