Photodetectors based on CuInS{sub 2}

It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS{sub 2} and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states w...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-01, Vol.50 (1)
Main Authors: Bulyarsky, S. V., Vostretsova, L. N., Gavrilov, S. A.
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
CHARGE CARRIERS
CONCENTRATION RATIO
CONVERSION
COPPER SULFIDES
EFFICIENCY
ELECTRIC CONDUCTIVITY
ENERGY GAP
EV RANGE
INDIUM SULFIDES
MATERIALS SCIENCE
PHOTODETECTORS
RECOMBINATION
TUNNEL EFFECT
VISIBLE RADIATION
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Summary:It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS{sub 2} and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 10{sup 16} cm{sup –2}.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782616010061