Photodetectors based on CuInS{sub 2}

It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS{sub 2} and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states w...

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Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2016-01, Vol.50 (1)
Main Authors: Bulyarsky, S. V., Vostretsova, L. N., Gavrilov, S. A.
Format: Article
Language:English
Subjects:
ACTIVATION ENERGY
CHARGE CARRIERS
CONCENTRATION RATIO
CONVERSION
COPPER SULFIDES
EFFICIENCY
ELECTRIC CONDUCTIVITY
ENERGY GAP
EV RANGE
INDIUM SULFIDES
MATERIALS SCIENCE
PHOTODETECTORS
RECOMBINATION
TUNNEL EFFECT
VISIBLE RADIATION
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container_title Semiconductors (Woodbury, N.Y.)
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Vostretsova, L. N.
Gavrilov, S. A.
description It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS{sub 2} and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 10{sup 16} cm{sup –2}.
doi_str_mv 10.1134/S1063782616010061
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fullrecord <record><control><sourceid>osti</sourceid><recordid>TN_cdi_osti_scitechconnect_22469620</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>22469620</sourcerecordid><originalsourceid>FETCH-osti_scitechconnect_224696203</originalsourceid><addsrcrecordid>eNpjYJA0NNAzNDQ20Q82NDAzNrcwMjM0MzA0MDAzZGLgNDSwNNA1MzG3ZAGxzYx1QfIcDFzFxVkGBoaGFqYmnAwqARn5JfkpqSWpySX5RcUKSYnFqSkK-XkKzqWeecHVxaVJCka1PAysaYk5xam8UJqbQdnNNcTZQze_uCQzvjg5E6g7Izk_Lw9oSLyRkYmZpZmRgTFxqgA5mzUx</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Photodetectors based on CuInS{sub 2}</title><source>Springer Link</source><creator>Bulyarsky, S. V. ; Vostretsova, L. N. ; Gavrilov, S. A.</creator><creatorcontrib>Bulyarsky, S. V. ; Vostretsova, L. N. ; Gavrilov, S. A.</creatorcontrib><description>It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS{sub 2} and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 10{sup 16} cm{sup –2}.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782616010061</identifier><language>eng</language><publisher>United States</publisher><subject>ACTIVATION ENERGY ; CHARGE CARRIERS ; CONCENTRATION RATIO ; CONVERSION ; COPPER SULFIDES ; EFFICIENCY ; ELECTRIC CONDUCTIVITY ; ENERGY GAP ; EV RANGE ; INDIUM SULFIDES ; MATERIALS SCIENCE ; PHOTODETECTORS ; RECOMBINATION ; TUNNEL EFFECT ; VISIBLE RADIATION</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2016-01, Vol.50 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,27923,27924</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/22469620$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Bulyarsky, S. V.</creatorcontrib><creatorcontrib>Vostretsova, L. N.</creatorcontrib><creatorcontrib>Gavrilov, S. A.</creatorcontrib><title>Photodetectors based on CuInS{sub 2}</title><title>Semiconductors (Woodbury, N.Y.)</title><description>It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS{sub 2} and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 10{sup 16} cm{sup –2}.</description><subject>ACTIVATION ENERGY</subject><subject>CHARGE CARRIERS</subject><subject>CONCENTRATION RATIO</subject><subject>CONVERSION</subject><subject>COPPER SULFIDES</subject><subject>EFFICIENCY</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ENERGY GAP</subject><subject>EV RANGE</subject><subject>INDIUM SULFIDES</subject><subject>MATERIALS SCIENCE</subject><subject>PHOTODETECTORS</subject><subject>RECOMBINATION</subject><subject>TUNNEL EFFECT</subject><subject>VISIBLE RADIATION</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpjYJA0NNAzNDQ20Q82NDAzNrcwMjM0MzA0MDAzZGLgNDSwNNA1MzG3ZAGxzYx1QfIcDFzFxVkGBoaGFqYmnAwqARn5JfkpqSWpySX5RcUKSYnFqSkK-XkKzqWeecHVxaVJCka1PAysaYk5xam8UJqbQdnNNcTZQze_uCQzvjg5E6g7Izk_Lw9oSLyRkYmZpZmRgTFxqgA5mzUx</recordid><startdate>20160115</startdate><enddate>20160115</enddate><creator>Bulyarsky, S. V.</creator><creator>Vostretsova, L. N.</creator><creator>Gavrilov, S. A.</creator><scope>OTOTI</scope></search><sort><creationdate>20160115</creationdate><title>Photodetectors based on CuInS{sub 2}</title><author>Bulyarsky, S. V. ; Vostretsova, L. N. ; Gavrilov, S. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-osti_scitechconnect_224696203</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>ACTIVATION ENERGY</topic><topic>CHARGE CARRIERS</topic><topic>CONCENTRATION RATIO</topic><topic>CONVERSION</topic><topic>COPPER SULFIDES</topic><topic>EFFICIENCY</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ENERGY GAP</topic><topic>EV RANGE</topic><topic>INDIUM SULFIDES</topic><topic>MATERIALS SCIENCE</topic><topic>PHOTODETECTORS</topic><topic>RECOMBINATION</topic><topic>TUNNEL EFFECT</topic><topic>VISIBLE RADIATION</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bulyarsky, S. V.</creatorcontrib><creatorcontrib>Vostretsova, L. N.</creatorcontrib><creatorcontrib>Gavrilov, S. A.</creatorcontrib><collection>OSTI.GOV</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bulyarsky, S. V.</au><au>Vostretsova, L. N.</au><au>Gavrilov, S. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photodetectors based on CuInS{sub 2}</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><date>2016-01-15</date><risdate>2016</risdate><volume>50</volume><issue>1</issue><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS{sub 2} and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 10{sup 16} cm{sup –2}.</abstract><cop>United States</cop><doi>10.1134/S1063782616010061</doi></addata></record>
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subjects ACTIVATION ENERGY
CHARGE CARRIERS
CONCENTRATION RATIO
CONVERSION
COPPER SULFIDES
EFFICIENCY
ELECTRIC CONDUCTIVITY
ENERGY GAP
EV RANGE
INDIUM SULFIDES
MATERIALS SCIENCE
PHOTODETECTORS
RECOMBINATION
TUNNEL EFFECT
VISIBLE RADIATION
title Photodetectors based on CuInS{sub 2}
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T10%3A55%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-osti&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Photodetectors%20based%20on%20CuInS%7Bsub%202%7D&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Bulyarsky,%20S.%20V.&rft.date=2016-01-15&rft.volume=50&rft.issue=1&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782616010061&rft_dat=%3Costi%3E22469620%3C/osti%3E%3Cgrp_id%3Ecdi_FETCH-osti_scitechconnect_224696203%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true