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On the radiation resistance of planar Gunn diodes with δ-doped layers

The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of δ layers of doping impurities contributes to the higher radiation resistance of planar diodes by an...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-11, Vol.49 (11), p.1459-1467
Main Authors: Obolenskaya, E. S., Churin, A. Yu, Obolensky, S. V., Murel, A. V., Shashkin, V. I.
Format: Article
Language:English
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Summary:The radiation resistance of planar Gunn diodes is investigated. Based on the results of measurements of the pulsed current–voltage characteristics and computer simulations it is shown that the use of δ layers of doping impurities contributes to the higher radiation resistance of planar diodes by an order of magnitude compared to conventional Gunn diodes. The results of this study make it possible to formulate methodical guidelines to reduce the amount of computational and experimental studies without a considerable decrease in their informativity.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615110160