Binding energy of excitons formed from spatially separated electrons and holes in insulating quantum dots

It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)–(insulating matrix) interface) in a nanosystem contai...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-10, Vol.49 (10), p.1311-1315
Main Authors: Pokutnyi, S. I., Kulchin, Yu. N., Dzyuba, V. P.
Format: Article
Language:English
Subjects:
ABSORPTION SPECTRA
ALUMINIUM OXIDES
BINDING ENERGY
Chemical properties
Comparative analysis
COMPARATIVE EVALUATIONS
ELECTRONS
EXCITONS
Force and energy
GROUND STATES
HOLES
INTERFACES
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MONOCRYSTALS
NANOPARTICLES
NANOSCIENCE AND NANOTECHNOLOGY
Physics
Physics and Astronomy
QUANTUM DOTS
Quantum Phenomena
Semiconductor Structures
TEMPERATURE RANGE 0273-0400 K
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Summary:It is found that the binding energy of the ground state of an exciton formed from an electron and a hole spatially separated from each other (the hole is moving within a quantum dot, and the electron is localized above the spherical (quantum dot)–(insulating matrix) interface) in a nanosystem containing insulating Al 2 O 3 quantum dots is substantially increased (by nearly two orders of magnitude) compared to the exciton binding energy in an Al 2 O 3 single crystal. It is established that, in the band gap of an Al 2 O 3 nanoparticle, a band of exciton states (formed from spatially separated electrons and holes) appears. It is shown that there exists the possibility of experimentally detecting the ground and excited exciton states in the band gap of Al 2 O 3 nanoparticles at room temperature from the absorption spectrum of the nanosystem.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615100218