Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures

Molecular-beam epitaxy is used for the preparation of structures based on “low-temperature” grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28–1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580°C;...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-07, Vol.49 (7), p.911-914
Main Authors: Lavrukhin, D. V., Yachmenev, A. E., Bugaev, A. S., Galiev, G. B., Klimov, E. A., Khabibullin, R. A., Ponomarev, D. S., Maltsev, P. P.
Format: Article
Language:English
Subjects:
Analysis
ANNEALING
EMISSION SPECTRA
Epitaxy
EV RANGE
Gallium arsenide
GALLIUM ARSENIDES
Investigations
LIFETIME
LIGHT TRANSMISSION
Low-Dimensional Systems
Magnetic Materials
Magnetism
MATERIALS SCIENCE
MOLECULAR BEAM EPITAXY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
PHOTONS
Physics
Physics and Astronomy
POINT DEFECTS
PROBES
Quantum Phenomena
Semiconductor Structures
SILICON
TEMPERATURE DEPENDENCE
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Summary:Molecular-beam epitaxy is used for the preparation of structures based on “low-temperature” grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28–1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580°C; these features are related to the formation of point defects and their complexes. The “pump–probe” light transmission measurements reveal that the characteristic lifetimes of nonequilibrium carriers in the fabricated structures amount to T c ≈ 1.2–1.5 ps.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615070179