Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

• Published in: Semiconductors (Woodbury, N.Y.) N.Y.), 2015-07, Vol.49 (7), p.899-904
• Main Authors: Sadananda Kumar, N., Bangera, Kasturi V., Shivakumar, G. K.
• Format: Article
• Language: English
• Subjects: Analysis; ANTIMONY; CARRIER MOBILITY; CONCENTRATION RATIO; Dielectric films; Diffraction; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; Electric properties; GLASS; GRAIN ORIENTATION; HALL EFFECT; HOLES; Interaction with Radiation; Magnetic Materials; Magnetism; MATERIALS SCIENCE; Methods; MORPHOLOGY; Physics; Physics and Astronomy; POLYCRYSTALS; PYROLYSIS; SCANNING ELECTRON MICROSCOPY; Spectroscopy; SPRAYS; SUBSTRATES; SULFUR IONS; SURFACES; THIN FILMS; X-RAY DIFFRACTION; X-rays; Zinc oxide; ZINC OXIDES
• ISSN: 1063-7826; 1090-6479
• DOI: 10.1134/S1063782615070143

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm 2 V –1 s –1 , and a hole concentration of 6.25 × 10 17 cm –3 .