Spectrometry of the Rutherford backscattering of ions and the Raman scattering of light in GaS single crystals irradiated with 140-keV H{sub 2}{sup +} ions

The methods of the Raman scattering of light and Rutherford backscattering are used to study the degree of structural disorder in layered GaS crystals before and after irradiation with 140-keV H{sub 2}{sup +} ions. It is shown that the distribution of the crystal’s components over depth is homogeneo...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-05, Vol.49 (5)
Main Authors: Garibov, A. A., Madatov, R. S., Komarov, F. F., Pilko, V. V., Mustafayev, Yu. M., Akhmedov, F. I., Jakhangirov, M. M.
Format: Article
Language:English
Subjects:
AMORPHOUS STATE
CRYSTAL STRUCTURE
CRYSTALS
GALLIUM SULFIDES
HYDROGEN IONS 2 PLUS
ION IMPLANTATION
IRRADIATION
LAYERS
MATERIALS SCIENCE
PHYSICAL RADIATION EFFECTS
RAMAN EFFECT
RAMAN SPECTROSCOPY
RUTHERFORD BACKSCATTERING SPECTROSCOPY
STOICHIOMETRY
VISIBLE RADIATION
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The methods of the Raman scattering of light and Rutherford backscattering are used to study the degree of structural disorder in layered GaS crystals before and after irradiation with 140-keV H{sub 2}{sup +} ions. It is shown that the distribution of the crystal’s components over depth is homogeneous; for doses as high as 5 × 10{sup 15} cm{sup −2}, the stoichiometric composition of the compound’s components is retained. The experimental value of the critical dose for the beginning of amorphization amounts to about 5 × 10{sup 15} cm{sup −2} and is in accordance with the calculated value. The results obtained by the method of the Raman scattering of light confirm conservation of crystalline structure and the start of the amorphization process.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782615050073