Investigation of surface potential in the V-defect region of MBE Cd{sub x}Hg{sub 1−x}Te film

Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-po...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2015-03, Vol.49 (3)
Main Authors: Novikov, V. A., Grigoryev, D. V.
Format: Article
Language:English
Subjects:
ATOMIC FORCE MICROSCOPY
CADMIUM COMPOUNDS
CONCENTRATION RATIO
CRYSTAL DEFECTS
MATERIALS SCIENCE
MERCURY TELLURIDES
MODIFICATIONS
MOLECULAR BEAM EPITAXY
SOLID SOLUTIONS
SURFACE POTENTIAL
VARIATIONS
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Summary:Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd{sub x}Hg{sub 1−x}Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd{sub x}Hg{sub 1−x}Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.
ISSN:1063-7826
1090-6479
DOI:10.1134/S106378261503015X